elektronische bauelemente SSG9435J -5.1a, -30v, r ds(on) 60 m ? p-ch enhancement mode power mosfet 10-feb-2017 rev. c page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g q9435 rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. features low r ds(on) provides higher efficiency and extends battery life miniature sop-8 surface mount package saves board s pace high power and current handling capability extended vgs range for battery pack applications application pwmdc-dc converters, power management in portable and battery-powered products such as compu ters, printers, battery charger, telecommunication power system, and telephones power system. marking package information package mpq leader size sop-8 4k 13 inch maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -5.1 a pulsed drain current i dm -20 a single pulsed avalanche energy 1 e as 20 mj power dissipation p d 1.4 w thermal resistance from junction to ambient r ja 89 c / w lead temperature for soldering purposes@1/8 from case for 10s t l 260 c operating junction and storage temperature range t j , t stg 150, -55 ~ 150 c notes: 1. v dd = -50v,l=0.5mh, r g =25 , starting t j =25c. sop-8 millimeter millimeter ref. min. max. ref. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. s s s g d d d d date code
elektronische bauelemente SSG9435J -5.1a, -30v, r ds(on) 60 m ? p-ch enhancement mode power mosfet 10-feb-2017 rev. c page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition off characteristics drain-source breakdown voltage v (br)dss -30 - - v v gs =0, i d = -250 a zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs =0 gate-body leakage current i gss - - 100 na v ds =0, v gs = 20v on characteristics 1 gate-threshold voltage v gs(th) -1 - -2 v v ds =v gs , i d = -250 a - - 60 v gs = -10v, i d = -4.6a - - 70 v gs = -6v, i d = -4.1a drain-source on-resistance r ds(on) - - 105 m v gs = -4.5v,i d = -2 a forward transconductance g fs - 5 - s v ds = -15v, i d = -4.6a dynamic characteristics total gate charge q g - 40 - gate-source charge q gs - 4 - gate-drain charge q gd - 6.3 - nc i d = -4.6a v ds = -15v v gs = -10v turn-on delay time t d(on) - 30 - rise time t r - 60 - turn-off delay time t d(off) - 120 - fall time t f - 100 - ns v dd = -15v i d = -1a v gen = -10v r l =15 r g =6 gate resistance r g - 5.8 - f=1mhz, v ds =v ds =0 drain-source diode characteristics diode forward voltage 1 v sd - - -1.2 v i s = -2.6a, v gs =0 continuous drain-source diode forward current i s - - -5.1 a pulsed drain-source diode forward current i sm - - -20 a notes: 1. pulse test: pulse width 300s, duty cycle 2%.
elektronische bauelemente SSG9435J -5.1a, -30v, r ds(on) 60 m ? p-ch enhancement mode power mosfet 10-feb-2017 rev. c page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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